Multi-2DEG HEMT

摘要

A high electron mobility field effect semiconductor device includes a layer stack including electron supply layers and electron transport layers to form a plurality of hetero-junctions so as to provide 2DEG layers in hetero-interfaces on the electron transport layer side, a source electrode and a drain electrode disposed with an interval on a surface of the layer stack to oppose each other and to be conductive to the 2DEG layers, and a gate electrode extending between the source and drain electrodes to develop a Schottky contact with the upper-most carrier supply layer. The electron supply layer remote from the gate electrode has an electron density higher than that of the electron supply layer less remote from the gate electrode.