| 摘要 |
PROBLEM TO BE SOLVED: To provide a photomask suppressing the degradation of pattern fidelity due to the influence of a light proximity effect and to provide a method for manufacturing a semiconductor device using the photomask. SOLUTION: In a photomask 100 used in a semiconductor manufacturing process, a first mask pattern 106 transferred to a resist pattern and a second mask pattern 108 of a resolution limit or less for suppressing the light proximity effect are provided. The second mask pattern is made linear and a plurality of the first mask patterns are connected. By turning the second mask pattern to a linear mask pattern, a parameter to be added to the simulation of the resist pattern can be reduced. The photomask for efficiently performing the simulation and forming suitable resist is provided. Also, the photomask can be used in the manufacturing process of the semiconductor device. |
