| 摘要 |
PROBLEM TO BE SOLVED: To obtain a contamination-quantity measuring method of a semiconductor wafer which is effective to measure simply and accurately its contamination quantity, obtain its contamination-density measuring method, and further, obtain a locally contaminated sample production method. SOLUTION: Locally and totally contaminated samples are produced respectively to determine local and total contamination characteristicsαDROP andαLAP showing their respective dependence on the incident angle of X-rays. Then, by using their relative relationαto each other, a contamination quantity AWAFER of a wafer is determined, and by measuring X-axis and Y-axis X-ray intensity distributions I(X), I(Y) of the locally contaminated sample, an effective aperture area W of a semiconductor detector is calculated to determine the wafer- contamination density DWAFER by using it. As a result, by using a calibration curve obtained from the locally contaminated sample, the absolute calibration of a total reflection fluorescent X-ray apparatus is made possible.
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