| 摘要 |
At a test of built-in memory of a conventional semiconductor integrated circuit, data is written into the memory one address by one address and confirmed the data one by one, in case of mass memory many test patterns and many test time are required. The present invention comprises a memory which is capable of data writing and reading. Also including is a device for setting the memory in the test state, a device for setting a predetermined length of arbitrary data written into the memory, and a device for writing in a batch process into the memory in a form of filling the memory area of the memory with the arbitrary data.
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