| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a silicon oxide film, a silicon nitride film, a silicon oxynitriding film and a high dielectric constant oxide film, which do not depend on a silicon plane direction, are uniform and high quality, and are excellent in electrical properties, on a silicon surface at about 500 deg. or lower. SOLUTION: In a film formation method of a semiconductor device including a plurality of silicon-based transistors or capacitors, hydrogen exists in at least a part of the silicon surface previously. After the hydrogen is removed by exposing the silicon surface to plasma by a first inert gas, plasma by a second inert gas and a mixture gas of one or a plurality of kinds of gaseous molecules is produced. As a result, a silicon compound layer containing at least a part of elements constituting the gaseous molecules is formed in a surface of the silicon base. |
