发明名称 |
Methods of forming dielectric structures and capacitors |
摘要 |
A capacitor including a dielectric structure, a lower electrode may be formed on a substrate. The dielectric structure may be formed on the lower electrode, and may include a first thin film, which may improve a morphology of the dielectric structure, and a second thin film, which may have at least one of an EOT larger than that of the first thin film and a dielectric constant higher than that of the first thin film. An upper electrode may be formed on the dielectric structure, and the dielectric structure may have an improved morphology and/or a higher dielectric constant.
|
申请公布号 |
US2005170601(A1) |
申请公布日期 |
2005.08.04 |
申请号 |
US20050059449 |
申请日期 |
2005.02.17 |
申请人 |
YOON KYOUNG-RYUL;CHOI HAN-MEI;LEE SEUNG-HWAN;CHOI DAE-SIK;PARK KI-YEON;KIM YOUNG-SUN;KIM SUNG-TAE;YOU CHA-YOUNG |
发明人 |
YOON KYOUNG-RYUL;CHOI HAN-MEI;LEE SEUNG-HWAN;CHOI DAE-SIK;PARK KI-YEON;KIM YOUNG-SUN;KIM SUNG-TAE;YOU CHA-YOUNG |
分类号 |
H01L21/20;H01L29/04;H01L29/10;H01L31/036;H01L31/0376;H01L31/20;(IPC1-7):H01L29/04;H01L31/037 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|