发明名称 Methods of forming dielectric structures and capacitors
摘要 A capacitor including a dielectric structure, a lower electrode may be formed on a substrate. The dielectric structure may be formed on the lower electrode, and may include a first thin film, which may improve a morphology of the dielectric structure, and a second thin film, which may have at least one of an EOT larger than that of the first thin film and a dielectric constant higher than that of the first thin film. An upper electrode may be formed on the dielectric structure, and the dielectric structure may have an improved morphology and/or a higher dielectric constant.
申请公布号 US2005170601(A1) 申请公布日期 2005.08.04
申请号 US20050059449 申请日期 2005.02.17
申请人 YOON KYOUNG-RYUL;CHOI HAN-MEI;LEE SEUNG-HWAN;CHOI DAE-SIK;PARK KI-YEON;KIM YOUNG-SUN;KIM SUNG-TAE;YOU CHA-YOUNG 发明人 YOON KYOUNG-RYUL;CHOI HAN-MEI;LEE SEUNG-HWAN;CHOI DAE-SIK;PARK KI-YEON;KIM YOUNG-SUN;KIM SUNG-TAE;YOU CHA-YOUNG
分类号 H01L21/20;H01L29/04;H01L29/10;H01L31/036;H01L31/0376;H01L31/20;(IPC1-7):H01L29/04;H01L31/037 主分类号 H01L21/20
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