| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high density sputtering target that enables high speed deposition upon reducing the influence of heat or the like on a substrate upon forming a film via sputtering, adjustment for thinning the film thickness, and reduction of the generation of particles (dust) and nodules during sputtering, so as to reduce variation in quality and to improve mass-productivity, and in which the crystal grains are fine, as well as the manufacturing method thereof, in particular, to obtain a thin film for an optical information recording medium optimum for use as a protective film, as well as the manufacturing method thereof. <P>SOLUTION: Provided is a sputtering target containing a compound having as its principal component zinc oxide satisfying A<SB>X</SB>B<SB>Y</SB>O<SB>(KsX+KbY)/2</SB>(ZnO)<SB>m</SB>, 0<X<2, Y=2-X, 1≤m, wherein A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb, as well as zinc chalcogenide, and having a relative density of 90% or more and a bulk resistance value of 0.1 Ωcm or less. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
