| 摘要 |
PROBLEM TO BE SOLVED: To inspect the characteristics of a semiconductor element without performing FIB. SOLUTION: The semiconductor device comprises a semiconductor element formed in the active cell 10a of a semiconductor substrate 1, a dummy semiconductor element formed in a dummy area 10b located on the periphery of the active cell 10a, an insulating film 20 formed on the semiconductor element and the dummy element, contact holes 20a and 20b formed in the insulating film 20 located on the semiconductor element and arranged in first layout, dummy contact holes 20d, 20e and 20f formed in the insulating film 20 located on the dummy element and arranged in second layout, interconnect lines 22a and 22b formed on the insulating film 20 and connected with the semiconductor element through the contact holes 20a and 20b, and electrodes 22d, 22e and 22f formed on the insulating film 20 and connected with the dummy element through the dummy contact holes 20d, 20e and 20f. COPYRIGHT: (C)2007,JPO&INPIT
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