FLASH MEMORY DEVICE AND VOLTAGE GENERATING CIRCUIT FOR THE SAME

摘要

A flash memory device and a voltage generation circuit for the same are provided to perform program, erase and read operation of a flash memory more accurately by supplying multiple constant voltages stably. A memory cell array(10) consists of a plurality of memory cells. A voltage generation circuit(70) generates multiple constant voltages to be applied to the memory cell array. A selection circuit selects one of the constant voltages and then applies the selected constant voltage to the memory cell array. The voltage generation circuit discharges a leakage current inputted from the selection circuit through a voltage dividing path generating the constant voltages.