发明名称 |
METHOD FOR MANUFACTURING SEMI-TRANSPARENT SEMI-REFLECTIVE ELECTRODE SUBSTRATE, REFLECTIVE ELEMENT SUBSTRATE, METHOD FOR MANUFACTURING SAME, ETCHING COMPOSITION USED FOR THE METHOD FOR MANUFACTURING THE REFLECTIVE ELECTRODE SUBSTRATE |
摘要 |
<p>An etchant for selective etching is used to simplify the production process of a semi-transparent semi-reflective electrode substrate, and temporal loss is not produced by avoiding troublesome repeated works, thereby efficiently providing a semi-transparent semi-reflective electrode substrate. A method for manufacturing a semi-transparent semi-reflective electrode substrate where a metal oxide layer ( 12 ) made of at least indium oxide and an inorganic compound layer ( 14 ) at least made of Al or Ag are formed in order of mention. The method comprises a step of etching the inorganic compound layer ( 14 ) with an etchant X composed of phosphoric acid, nitric acid, and acetic acid and a step of etching the metal oxide layer ( 12 ) with an etchant a containing oxalic acid.</p> |
申请公布号 |
EP1592050(A4) |
申请公布日期 |
2007.10.17 |
申请号 |
EP20030815744 |
申请日期 |
2003.11.20 |
申请人 |
IDEMITSU KOSAN COMPANY LIMITED |
发明人 |
INOUE, KAZUYOSHI |
分类号 |
C23F1/20;C23F1/30;G02F1/1335;G02F1/1343;H01L51/52;(IPC1-7):G02F1/134 |
主分类号 |
C23F1/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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