发明名称 |
Method of fabricating single-crystal silicon film and method of fabricating TFT adopting the same |
摘要 |
A method for forming a single-crystal silicon film of high quality is provided. The method includes the operations of: growing single-crystal silicon to a predetermined thickness of a crystal growth plate; depositing a buffer layer on the single-crystal silicon layer; forming a partition layer at a predetermined depth in the single-crystal silicon layer by implanting hydrogen ions in the single-crystal silicon layer from an upper portion of an insulating layer; attaching a substrate onto the buffer layer; and cutting the partition layer of the single-crystal silicon layer by heating the partition layer from the crystal growth plate to obtain a single-crystal silicon layer of a predetermined thickness on the substrate.
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申请公布号 |
US7402465(B2) |
申请公布日期 |
2008.07.22 |
申请号 |
US20050270607 |
申请日期 |
2005.11.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
NOGUCHI TAKASHI;XIANYU WENXU |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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