发明名称 POSITIVE RESIST COMPOSITION FOR LIQUID IMMERSION EXPOSURE AND RESIST PATTERN FORMING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive resist composition for liquid immersion exposure having satisfactory lithography characteristics and preferable hydrophobic properties for liquid immersion exposure and a resist pattern forming method. <P>SOLUTION: The positive resist composition for liquid immersion exposure includes: a base material member component (A) having solubility in alkaline developing solution increased with the action of an acid; an acid generator component (B) generating an acid by exposure; and a macromolecular compound (C) having an aromatic cyclic group having a fluorine atom at a side chain. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008309938(A) 申请公布日期 2008.12.25
申请号 JP20070156364 申请日期 2007.06.13
申请人 TOKYO OHKA KOGYO CO LTD 发明人 DAZAI NAOHIRO;UCHIUMI YOSHIYUKI;MORI YOSHITAKA;YOSHII YASUHIRO;KAWANA DAISUKE;WATABE RYOJI
分类号 G03F7/039;H01L21/027 主分类号 G03F7/039
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