| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device which is formed on the GaAs substrate and has a quantum dot active layer, the semiconductor light-emitting device being improved in yield by making it possible to form a diffraction grating in a semiconductor laminated structure. <P>SOLUTION: The semiconductor light-emitting device includes the GaAs substrate 1, the quantum dot active layer 3 formed over the GaAs substrate 1, a GaAs layer 4 formed above or below the quantum dot active layer 3, and the diffraction grating 7 formed from InGaP or InGaAsP and periodically provided along an propagating direction of light in the GaAs layer 4. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
