SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR FABRICATING THE SAME

摘要

Provided are a semiconductor device and a manufacturing method thereof, which can reduce parasitic capacitance between neighboring conductive structures. According to the present invention, the manufacturing method of a semiconductor device may comprise: a step of preparing a substrate including a memory cell area and a surrounding circuit area; a step of forming a buried word line within the substrate of the memory cell area; a step of forming a planar gate structure on the substrate of the surrounding circuit area; a step of forming a bit-line structure on the substrate of the memory cell area; a step of forming a first air spacer on a side wall of the planar gate structure; and a step of forming a second air spacer on a side wall of the bit-line structure.