发明名称 Light-emitting device and method for manufacturing the same
摘要 A light-emitting device includes a semiconductor light-emitting element, a first resin layer, a first metallic layer, a second resin layer, and a second metallic layer. The semiconductor light-emitting element includes a semiconductor stacked body and an electrode provided on one side of the semiconductor stacked body. The second resin layer is provided on the first resin layer and has a lower surface in contact with the first resin layer and an upper surface opposite to the lower surface. The second metallic layer is provided in the second resin layer and has a metallic lower surface and a metallic upper surface opposite to the metallic lower surface. The metallic upper surface is exposed from the second resin layer. The metallic upper surface of the second metallic layer is at least partially lower in height from the semiconductor stacked body than the upper surface of the second resin layer.
申请公布号 US9385279(B2) 申请公布日期 2016.07.05
申请号 US201514723463 申请日期 2015.05.28
申请人 NICHIA CORPORATION 发明人 Sogo Takayuki;Sogai Takanobu;Kasai Hisashi
分类号 H01L33/36;H01L33/38;H01L33/52;H01L33/00;H01L33/54;H01L33/62 主分类号 H01L33/36
代理机构 Mori & Ward, LLP 代理人 Mori & Ward, LLP
主权项 1. A light-emitting device comprising: a semiconductor light-emitting element comprising: a semiconductor stacked body; andan electrode provided on one side of the semiconductor stacked body; a first resin layer provided on the one side of the semiconductor stacked body to cover the electrode; a first metallic layer provided in the first resin layer and electrically connected to the electrode; a second resin layer provided on the first resin layer and having a lower surface in contact with the first resin layer and an upper surface opposite to the lower surface; and a second metallic layer provided in the second resin layer and having a metallic lower surface and a metallic upper surface opposite to the metallic lower surface, the metallic lower surface being electrically connected to the first metallic layer, the metallic upper surface being exposed from the second resin layer, the metallic upper surface of the second metallic layer being at least partially lower in height from the semiconductor stacked body than the upper surface of the second resin layer.
地址 Anan-shi JP