Semiconductor growth substrates and associated systems and methods for die singulation

摘要

Semiconductor growth substrates and associated systems and methods for die singulation are disclosed. A representative method for manufacturing semiconductor devices includes forming spaced-apart structures at a dicing street located between neighboring device growth regions of a substrate material. The method can further include epitaxially growing a semiconductor material by adding a first portion of semiconductor material to the device growth regions and adding a second portion of semiconductor material to the structures. The method can still further include forming semiconductor devices at the device growth regions, and separating the semiconductor devices from each other at the dicing street by removing the spaced-apart structures and the underlying substrate material at the dicing street.

主权项

1. A semiconductor device, comprising:
a substrate material; a plurality of semiconductor growth regions carried by the substrate material, with individual semiconductor growth regions having a first exposed surface; a dicing street between neighboring semiconductor growth regions; a plurality of spaced-apart sacrificial structures in the dicing street, with individual sacrificial structures having a second exposed surface, wherein a composition of the first exposed surface and the second exposed surface is the same; and a nucleation-inhibition mask in the dicing street between a given one of the sacrificial structures and a given one of the semiconductor growth regions, wherein the nucleation-inhibiting mask is a dielectric.