Reliable packaging and interconnect structures

摘要

Methods and apparatus for forming a semiconductor device are provided which may include any number of features. One feature is a method of forming an interconnect structure that results in the interconnect structure having a top surface and portions of the side walls of the interconnect structure covered in a dissimilar material. In some embodiments, the dissimilar material can be a conductive material or a nano-alloy. The interconnect structure can be formed by removing a portion of the interconnect structure, and covering the interconnect structure with the dissimilar material. The interconnect structure can comprise a damascene structure, such as a single or dual damascene structure, or alternatively, can comprise a silicon-through via (TSV) structure.

主权项

1. A method of manufacturing a structure comprising a semiconductor device, the method comprising:
forming a first opening in a substrate, the first opening extending down into the substrate; forming a first feature for an interconnect structure, the first feature being electrically conductive and having a sidewall in the first opening; and forming a second feature overlying the first feature and extending down into the first opening along the sidewall of the first feature, the second feature comprising a first material different from any material in the sidewall and top of the first feature.