发明名称 Sublithographic Kelvin structure patterned with DSA
摘要 In one aspect, a DSA-based method for forming a Kelvin-testable structure includes the following steps. A guide pattern is formed on a substrate which defines i) multiple pad regions of the Kelvin-testable structure and ii) a region interconnecting two of the pad regions on the substrate. A self-assembly material is deposited onto the substrate and is annealed at a temperature/duration sufficient to cause it to undergo self-assembly to form a self-assembled pattern on the substrate, wherein the self-assembly is directed by the guide pattern such that the self-assembled material in the region interconnecting the two pad regions forms multiple straight lines. A pattern of the self-assembled material is transferred to the substrate forming multiple lines in the substrate, wherein the pattern of the self-assembled material is configured such that only a given one of the lines is a continuous line between the two pad regions on the substrate.
申请公布号 US9385026(B2) 申请公布日期 2016.07.05
申请号 US201414272691 申请日期 2014.05.08
申请人 GlobalFoundries, Inc. 发明人 Chang Josephine B.;Guillorn Michael A.;Lin Chung-Hsun;Tsai HsinYu
分类号 H01L21/768;H01L21/311;H01L23/528 主分类号 H01L21/768
代理机构 Hoffman Warnick LLC 代理人 Cain David;Hoffman Warnick LLC
主权项 1. A Kelvin-testable structure, comprising: multiple pad regions of the Kelvin-testable structure formed on a substrate; and a line region in between the pad regions comprising multiple straight lines patterned in the substrate from a self-assembled material, wherein the lines have a pitch of from about 10 nanometers to about 75 nanometers, and wherein only a single given one of the lines is a continuous line between two of the pad regions on the substrate with all other lines being discontinuous lines that do not connect to one of the pad regions and thus, while nested in the other lines, the single given line is an only continuous line between two of the pad regions on the substrate.
地址 Grand Cayman KY