BIPOLAR JUNCTION TRANSISTOR WITH MULTIPLE EMITTER FINGERS

摘要

Device structures for a bipolar junction transistor and methods of fabricating a device structure for a bipolar junction transistor. A first semiconductor layer is formed on a substrate, and a second semiconductor layer is formed on the first semiconductor layer. The first semiconductor layer, the second semiconductor layer, and the substrate are etched to define first and second emitter fingers from the second semiconductor layer and trenches in the substrate that are laterally positioned between the first and second emitter fingers. The first semiconductor layer may function as a base layer in the device structure.

主权项

1. A method of fabricating a device structure for a bipolar junction transistor, the method comprising:
forming a first semiconductor layer on a substrate; forming a second semiconductor layer on the first semiconductor layer; and etching the first semiconductor layer, the second semiconductor layer, and the substrate to define a first emitter finger and a second emitter finger from the second semiconductor layer and a plurality of first trenches in the substrate that are laterally positioned between the first emitter finger and the second emitter finger.