| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method capable of etching a first region composed of silicon oxide to a second region composed of silicon nitride while suppressing blocking of an opening.SOLUTION: A method of an embodiment includes: (a) a first step of generating plasma of a process gas containing a fluorocarbon gas in a processing container housing a workpiece and forming a deposit containing a fluorocarbon on the workpiece; (b) a second step of generating plasma of a process gas containing an oxygen-containing gas and an inert gas in the processing container housing the workpiece; and (c) a third step of etching a first region by radical of a fluorocarbon contained in the deposit. This method repeatedly performs a sequence including the first step, the second step, and the third step.SELECTED DRAWING: Figure 1 |
