Method for producing a silicon single crystal

摘要

A silicon single crystal is produced by a method wherein
a silicon plate is inductively heated;granular silicon is melted on the silicon plate; andthe molten silicon thus produced flows through a flow conduit in the center of the plate to a phase boundary at which a silicon single crystal crystallizes, wherein a silicon ring having a lower resistivity than the plate, and lying on the plate, is inductively heated prior to inductively heating the plate, and melting the ring.

主权项

1. A method for producing a silicon single crystal, comprising
inductively heating a silicon plate having an outer diameter; melting granular silicon on the silicon plate; and feeding molten silicon through a flow conduit having an inner diameter and located in the center of the plate, to a phase boundary, crystallizing molten silicon at the phase boundary to form a silicon single crystal, wherein a silicon ring lying on the plate and having a lower resistivity than the plate and having an inner and an outer diameter is inductively heated before inductively heating the plate, and melting the ring.