Semiconductor Devices And Fabrication Methods With Improved Word Line Resistance and Reduced Salicide Bridge Formation

摘要

Provided are improved semiconductor memory devices and method for manufacturing such semiconductor memory devices. A method may incorporate the formation of silicide regions in a semiconductor. The method may allow for a semiconductor with a silicide layer with improved resistance and reduced silicide bridge formation.

主权项

1. A method of forming a semiconductor device, the method comprising:
forming a first conductive line and a second conductive line over a substrate; forming a dielectric fill material physically touching the first conductive line, wherein a ratio of 1) a distance between the first conductive line and the second conductive line to 2) a difference in height of the first conductive line and the dielectric fill material is from about 0.1 to about 5.0; and converting at least a portion of the first conductive line into one or more silicide regions.