HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS FOR HEATING SUBSTRATE BY IRRADIATING SUBSTRATE WITH LIGHT

摘要

First irradiation which causes an emission output from a flash lamp to reach its maximum value over a time period in the range of 1 to 20 milliseconds is performed to increase the temperature of a front surface of a semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. This achieves the activation of the impurities. Subsequently, second irradiation which gradually decreases the emission output from the maximum value over a time period in the range of 3 to 50 milliseconds is performed to maintain the temperature of the front surface within a ±25° C. range around the target temperature for a time period in the range of 3 to 50 milliseconds. This prevents the occurrence of process-induced damage while suppressing the diffusion of the impurities.

主权项

1. A method of heating a substrate by irradiating the substrate with light, the method comprising the steps of:
(a) increasing an emission output from a flash lamp from zero to a first emission output value over a time period in the range of 1 to 20 milliseconds to irradiate a substrate with light; and (b) irradiating the substrate with light while gradually decreasing the emission output from said flash lamp from the first emission output value over a time period in the range of 3 to 50 milliseconds so that the temperature of a front surface of said substrate is maintained within a ±25° C. range around a temperature reached by the front surface of the substrate in said step (a).