发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE |
摘要 |
With a method for manufacturing a semiconductor device, a semiconductor layer having a protrusion on a main face is formed. The protrusion includes an upper face and side faces. A conductive layer on a region that includes at least the upper face and the side faces of the protrusion is formed. A first mask that partially covers a surface of the conductive layer is formed. A part of the conductive layer is etched by using the first mask in a first etching process. A second mask that at least partially covers the surface of the conductive layer that has undergone the first etching process is formed. A part of the conductive layer is etched by using the second mask to expose a part of the semiconductor layer and to form the conductive layer into an electrode in a second etching process. |
申请公布号 |
US2016247682(A1) |
申请公布日期 |
2016.08.25 |
申请号 |
US201615047774 |
申请日期 |
2016.02.19 |
申请人 |
NICHIA CORPORATION |
发明人 |
HARADA Susumu |
分类号 |
H01L21/283;H01L21/308;H01L29/423;H01L21/306 |
主分类号 |
H01L21/283 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method for manufacturing a semiconductor device, comprising:
forming a semiconductor layer having a protrusion on a main face, the protrusion having an upper face and side faces; forming a conductive layer on a region that includes at least the upper face and the side faces of the protrusion; forming a first mask that partially covers a surface of the conductive layer; etching a part of the conductive layer by using the first mask in a first etching process; forming a second mask that at least partially covers the surface of the conductive layer that has undergone the first etching process; and etching a part of the conductive layer by using the second mask to expose a part of the semiconductor layer and to form the conductive layer into an electrode in a second etching process. |
地址 |
Anan-shi JP |