发明名称 CHIP RESISTOR AND METHOD FOR MANUFACTURING THE SAME
摘要 A chip resistor includes an upper electrode provided on a substrate, a resistor element connected to the upper electrode, and a side electrode connected to the upper electrode. The side electrode, arranged on a side surface of the substrate, has two portions overlapping with the obverse surface and reverse surface of the substrate, respectively. An intermediate electrode covers the side electrode, and an external electrode covers the intermediate electrode. A first protective layer is disposed between the upper electrode and the intermediate electrode, and held in contact with the upper electrode and the side electrode. The first protective layer is more resistant to sulfurization than the upper electrode. A second protective layer is disposed between the first protective layer and intermediate electrode, and held in contact with the first protective layer, side electrode and intermediate electrode.
申请公布号 US2016247610(A1) 申请公布日期 2016.08.25
申请号 US201615044671 申请日期 2016.02.16
申请人 ROHM CO., LTD. 发明人 SHINOURA Takanori;IMAHASHI Wataru
分类号 H01C1/142;C23C14/00;H01C1/148 主分类号 H01C1/142
代理机构 代理人
主权项 1. A chip resistor comprising: a substrate having a first surface, a second surface and a side surface, the first and the second surfaces being spaced apart from each other in a thickness direction of the substrate, the side surface being located between the first surface and the second surface; an upper electrode provided on the first surface of the substrate; a resistor element arranged on the first surface of the substrate and electrically connected to the upper electrode; a side electrode electrically connected to the upper electrode and has a first, a second and a third portion, the first portion being arranged on the side surface of the substrate, the second portion and the third portion overlapping with the first surface and the second surface in the thickness direction, respectively; an intermediate electrode covering the side electrode; an external electrode covering the intermediate electrode; a first protective layer located between the upper electrode and the intermediate electrode, the first protective layer being in contact with the upper electrode and the side electrode and being more resistant to sulfurization than the upper electrode; and an electroconductive second protective layer located between the first protective layer and the intermediate electrode, the second protective layer being in contact with the first protective layer, the side electrode and the intermediate electrode.
地址 Kyoto-shi JP