FORMATION OF HIGH-HEAT-RESISTANT, NEGATIVE TYPE RESIST PATTERN

摘要

PURPOSE:To improve the adhesive property between a substrate and a pattern and the yield of products, by exposing a negative type resist film formed on a substrate, forming a desired resist pattern after development, and irradiating the whole pattern with an energized beam chosen among ultraviolet rays and the like. CONSTITUTION:A silicon oxide film of designated thickness is formed on a silicon substrate by thermal oxidation. A negative resist is coated in designated thickness with chloromethylate poly alpha-methyl styrene. A desired resist pattern is formed after exposure and development. The whole resist pattern is irradiated with an energized beam chosen among ultraviolet rays, far-ultraviolet rays, soft- X-rays and gamma rays. The substrate and negative resist are tightly fixed. This prevents the pattern from flash at its ends of deforming. The pattern shape is kept stable after development. The heat resistance is improved.