| 摘要 |
PURPOSE:To easily obtain a subject device which is small-sized and compact on the whole with an improved property, by a method wherein a source electrode, a drain electrode, and a gate electrode are formed using a common mask layer. CONSTITUTION:A N type semiconductor layer 22 consisting of Si is formed on a substrate by a gaseous growing method. A metal layer 23 is then formed on the layer 22 by a vacuum-evaporating method, mask layers 25 and 26 are formed on the metal layer 23 by a photo resist layer 24, and a given distance is kept between sides 27 and 28 positioned facing and opposite to each other. A metal layer 30 with a side 29 and a metal layer 32 with a side 31 are formed by etching the metal layer 23 with the layers 25 and 26 acting as a mask. A schottky junction 37 is then formed on a region 36, the layer 25 and 26 are removed by a solvent to install a source electrode constituted such that the metal layer 30 is coupled to the layer 22 in an ohmic manner and a drain electrode formed such that the layer 32 is joined to the layer 22 in an ohmic contact manner. Then, a metal layer 38 and a region between the source electrode and drain electrode of the layer 22 are connected through the junction 37 to obtain a gate electrode. |
