| 摘要 |
PURPOSE:To obtain a bipolar transistor, whose characteristics are determined by only an intrinsic base, by noting the fact that the performance is deteriorated by the extension of a graft base for taking out a base electrode into collector and emitter regions, and limiting the graft base by an insulator. CONSTITUTION:An N<+> type sub-collector region 2 is diffused and formed in the surface layer part of a P-type Si substrate 1. An N<-> type active collector layer 3 is epitaxially grown on the region 2. The outside of the layer 3 is surrounded by an insulator 8. The layer 3 is divided by the same insulator 8. One is used for the active region of a transistor, and the other is used for a collector taking out region. A P-type base region 4, which is larger than the area of the layer 3 is provided on the layer 3 in the active region. A graft base region 6 and an outer base 7, which is linked to the region 6, are formed on the insulator 8 around the region 4. An N<+> type emitter region 5 having the same area as the region 3 is formed on the region 5 and surrounded by an insulator film 9. Thus contact of the graft base 6 and the regions 3 and 5 is positively prevented.
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