| 发明名称 |
Method for etching tungsten |
| 摘要 |
Tungsten is rapidly and anisotropically etched under plasma bombardment conditions by using a feed gas mixture which includes a fluorine source (such as SF6) plus a bromine source (such as HBr), plus a hydrocarbon source (e.g., an alkyl, such as methane).
|
| 申请公布号 |
US4863558(A) |
申请公布日期 |
1989.09.05 |
| 申请号 |
US19880188178 |
申请日期 |
1988.04.27 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
JUCHA, RHETT B.;DAVIS, CECIL J.;CRANK, SUE E. |
| 分类号 |
C23C14/56;C23F4/00;H01L21/00;H01L21/677 |
主分类号 |
C23C14/56 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
