| 摘要 |
PROBLEM TO BE SOLVED: To optimize the thickness of thickness silicon layers and to improve a voltage-current characteristic especially in low illuminance by providing a back electrode layer on one main face side of a substrate constituted of crystal silicon and sequentially stacking first and second amorphous silicon layers with specified thickness, and light-receiving electrode layer on the other main face. SOLUTION: The back electrode layer 8 is provided on one main face side of the substrate 1 constituted of p-type or n-type crystal silicon, and the i-type first amorphous silicon layer 2, the p-type or n-type second amorphous silicon layer 3 and the light-receiving electrode layer 4 are sequentially stacked on the other main face of the substrate 1. The thickness of the first amorphous silicon layer 2 is set to be less than 400Å, and the thickness of the second amorphous silicon layer 3 is set to be less than 100Å. Especially, the thickness of the second amorphous silicon layer 3 is set to be optimum one for suppressing the absorption of light. Thus, the voltage-current characteristic becomes satisfactory especially in low illuminance, and the photoelectric conversion device S of the solar battery superior in high efficiency and the optical sensor superior in the characteristic can be obtained. |
