| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a snap programming preadjustment procedure which prevents a short circuit from being generated in a depleted cell by a method wherein memory cells inside an array are programmed by one programming pulse and a program is verified regarding an arbitrary cell inside the array. SOLUTION: Respective memory cells 10 inside a flash memory array are programmed by one programming pulse, and a program regarding arbitrary memory cells including those which have column lines 18 jointly in then verified. As a result, before a program is verified regarding the other arbitray cells 10 which have the same column lines 18 jointly, the depleted cells 10 can receive the programming pulse. When the arbitrary cells 10 are programmed by one pulse, the arbitrary depleted cells 10 escapes from being depleted. In succession to the programming of the respective cells 10 by one pulse, until the program state of all the cells 10 is verified or until a flaw is found out, an ordinary program verification/program loop is executed regarding the cells 10 including those which have the column lines 18 jointly.</p> |
