发明名称 |
Semiconductor device and method for making the same |
摘要 |
A semiconductor device includes an element formed on a first surface of a semiconductor substrate, a via-hole passing through the semiconductor substrate from the first surface to a second surface of the semiconductor substrate, and an electrode formed on the inner wall of the via-hole, the electrode passing through the semiconductor substrate from the first surface to the second surface. The electrode in the via-hole is electrically connected to at least one electrode of the element; the semiconductor substrate is mounted on a surface mount board; and the electrode formed on the inner wall of the via-hole is electrically connected to an electrode of the surface mount board by a conductive bonding material, such as a conductive adhesive. A method for fabricating the semiconductor device is also disclosed.
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申请公布号 |
US6501182(B2) |
申请公布日期 |
2002.12.31 |
申请号 |
US20010888951 |
申请日期 |
2001.06.25 |
申请人 |
MURATA MANUFACTURING CO., LTD. |
发明人 |
KOBAYASHI ATSUSHI;SUEYOSHI MASAAKI;KANAE MASAAKI;INAI MAKOTO |
分类号 |
H01L23/52;H01L21/3205;H01L23/36;H01L23/367;H01L23/48;H01L23/66;H01L29/80;(IPC1-7):H01L29/40;H01L23/34 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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