发明名称 Semiconductor device and method for making the same
摘要 A semiconductor device includes an element formed on a first surface of a semiconductor substrate, a via-hole passing through the semiconductor substrate from the first surface to a second surface of the semiconductor substrate, and an electrode formed on the inner wall of the via-hole, the electrode passing through the semiconductor substrate from the first surface to the second surface. The electrode in the via-hole is electrically connected to at least one electrode of the element; the semiconductor substrate is mounted on a surface mount board; and the electrode formed on the inner wall of the via-hole is electrically connected to an electrode of the surface mount board by a conductive bonding material, such as a conductive adhesive. A method for fabricating the semiconductor device is also disclosed.
申请公布号 US6501182(B2) 申请公布日期 2002.12.31
申请号 US20010888951 申请日期 2001.06.25
申请人 MURATA MANUFACTURING CO., LTD. 发明人 KOBAYASHI ATSUSHI;SUEYOSHI MASAAKI;KANAE MASAAKI;INAI MAKOTO
分类号 H01L23/52;H01L21/3205;H01L23/36;H01L23/367;H01L23/48;H01L23/66;H01L29/80;(IPC1-7):H01L29/40;H01L23/34 主分类号 H01L23/52
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