发明名称 MEASURING METHOD FOR SHAPE OF PATTERN AND MEASURING METHOD FOR POSITION OF PATTERN
摘要 PROBLEM TO BE SOLVED: To obtain a measuring method in which the coating state of an organic film coated on a step can be measured, in which a superposition accuracy can be measured with high accuracy even when a superposition-accuracy measuring pattern is a low step or a high step, in which the size of the pattern can be measured with good accuracy by means of an electron beam and in which the electron beam is scanned on an alignment mark so as to be aligned with good accuracy. SOLUTION: A mask which has a prescribed pattern is superposed on a semiconductor substrate 30, an exposure operation is performed, a laminate pattern 37 is formed, the laminate pattern 37 is scanned back and forth by an atomic force microscope, the amount of a superposition deviation between laminate patterns is measured on the basis of a step shape, in its backward and forward operation, obtained by the scanning operation of the atomic force microscope, and the amount of the superposition deviation obtained on the basis of the step shape in the backward and forward operation is average. Thereby, a superposition accuracy is computed.
申请公布号 JPH09257457(A) 申请公布日期 1997.10.03
申请号 JP19960060802 申请日期 1996.03.18
申请人 MATSUSHITA ELECTRON CORP 发明人 YAMASHITA KAZUHIRO
分类号 G01B15/00;G01B15/08;G01B21/20;G01B21/30;G01N37/00;G01Q60/24;G03F7/26;H01L21/027;H01L21/66;(IPC1-7):G01B21/20 主分类号 G01B15/00
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