| 摘要 |
<p>An interlayer insulation layer (20) is formed on a semiconductor substrate (1) and a groove of a wiring shape is formed in the interlayer insulation layer (20). Then, the groove is buried with conductor. A part of the conductor is covered with a mask material, and a part of the conductor not covered with the mask is etched to form a recess. Thus, a first wiring (25) is defined at a part of the conductor under the recess, and a columnar projection (26) to be a connecting portion of wirings is defined at a side of the recess on the first wiring (25). An insulation layer (28) is buried in the recess except for the upper surface of the columnar projection (26). A second wiring (30) covering at least a part of the exposed upper surface of the columnar projection (26) is formed. <IMAGE></p> |
