发明名称 |
Semiconductor device and manufacture method of same |
摘要 |
<p>A semiconductor device has an insulated gate transistor in which source and drain regions are provided in a single crystal semiconductor layer formed on an insulating layer with a channel region interposed between the source and drain regions. An insulating layers just below the source and drain regions are made thicker than an insulating layer just below the channel region. <IMAGE></p> |
申请公布号 |
EP0810652(A2) |
申请公布日期 |
1997.12.03 |
申请号 |
EP19970111478 |
申请日期 |
1993.01.27 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
INOUE, SHUNSUKE;MIYAWAKI, MAMORU;KOHCHI, TETSUNOBU |
分类号 |
H01L21/336;H01L21/762;H01L21/8238;H01L27/06;H01L27/12;H01L29/786;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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