| 摘要 |
PROBLEM TO BE SOLVED: To easily form a shallow p-type impurity-doped region in a TV semiconductor substrate, by gasifying solid decaborane, ionizing the gaseous decaborane-molecules and accelerating resulting ions by an electric field to implant the ions in a target. SOLUTION: A decaborane bottle 1 is connected to a vacuum treating apparatus 10 through a valve 2. This apparatus includes an ionizer 11 having an electron gun, mass filter 12, Faraday cup 13, accelerator 14, deflector 15 and target 16. Decaborane in the bottle 1 is gasified, fed in the treating apparatus 10 and irradiated with electrons by the ionizer 11 into positive ions which are accelerated and injected into a target 16 such that the decaborane gas is jetted from a nozzle 4, ionized by the ionizer 11, and accelerated by the accelerator to run toward the target 16.
|
