| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing equipment and a manufacturing method of an electronic device wherein particles sticking to a wafer can be reduced in the cource of treatment like plasma etching. SOLUTION: Plasma 5 is generated in a chamber 1, and dry etching of a semiconductor substrate 7 mounted on a lower electrode 6 in the chamber 1 is performed. Since average surface roughness Ra of the lower surface of a quartz top plate 10 arranged above the lower electrode 6 is finished in a range of 0.2-5μm, adherence of the quartz top plate 10 and deposit 21 generated by dry etching is increased, and the number of particles floating in the chamber 1 is reduced. Sticking strengthening function of the deposit 21 can be maintained also after the quartz ceiling plate 10 is cleaned. Since treatment is performed in an extremely clean atmosphere, the number of foreign matters sticking to the semiconductor substrate 7 can be reduced.
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