| 摘要 |
PROBLEM TO BE SOLVED: To improve the interface property in the vicinity of the interface between an active layer and a gate insulating film, and raise the property or under-face equality of a film transistor, by forming a thermal oxide film on the surface of the active layer, and making it one part of the gate insulating film. SOLUTION: A pattern is made by patterning a crystalline silicon film. This serves as an active layer of a film transistor. Next, by plasma CVD method, a silicon oxide film 104 is grown into a thickness of 1000Å. Next, a thermal oxide film 105 is made by performing heat treatment at 640 deg.C in oxidative atmosphere containing HCL by 3%. At this time, the thermal oxide film is made on the surface of the active layer 103. This is attributed to activated oxygen penetrating silicon oxides. In this condition, a thermal oxide film is made at the interface between the activated layer 103 and a CVD silicon oxide film, and the decrease of the interface level at that place is materialized.
|
