发明名称 MAGNETO-RESISTIVE HEAD
摘要 PROBLEM TO BE SOLVED: To stably execute magnetic domain control by adding a longitudinal bias to NiFe which is an MR film and reducing the film thickness of an FeMn antiferromagnetic film to be used for executing the magnetic domain control. SOLUTION: A transverse bias is applied by an SAL bias system and the constitution of the MR element 14 is formed of SAL/Ta/NiFe which are respectively formed to 200 angstrom thickness. CoZrMo is used as an SAL bias film 12 and is formed to 200 angstrom thickness. After the MR element 14 is formed, an FeMn magnetic domain control layer 15 is formed at 100 angstrom thickness. An electrode 17 is formed of Cr/Cu/Cr to 1200 angstrom thickness. Upper and lower gaps 18A, 11A are formed of Al2 O3 to 3000 angstrom in gap length. Upper and lower shields 18, 11 are formed by using a Co-base amorphous material and are respectively formed to 2μm, 3μm. The generation of noises is lessened and excellent stability is obtd. with the MR head having the FeMn magnetic domain control layer which is as thin as described above (50 to 100 angstrom).
申请公布号 JPH10162325(A) 申请公布日期 1998.06.19
申请号 JP19960335139 申请日期 1996.11.29
申请人 VICTOR CO OF JAPAN LTD 发明人 ITO JUNICHI
分类号 G11B5/39;(IPC1-7):G11B5/39 主分类号 G11B5/39
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