| 摘要 |
PROBLEM TO BE SOLVED: To metallize a transmissive anode emitter with no trouble by specifying the thickness of the anode emitter and the doping concentration thereby setting the emitter efficiency of the anode emitter at a required level through setting of the lifetime of local carriers. SOLUTION: At first, an anode emitter 2 is diffused by implanting boron under a given condition while setting the intrusion depth in the range of 0.5-5μm and the doping concentration in the range of 10<17> -5×10<18> cm<-3> . In a second step, a required low efficiency, i.e., a high transparency, of the anode emitter 2 is realized by setting a lifetime prior to application of a metallization layer 10. For that purpose, nucleus of proton or helium is preferably irradiated at a depth deeper than the intrusion depth of the anode emitter 2 but shallower than the intrusion depth of a stop layer 3.
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