发明名称 STACKED CAPACITOR AND MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To prevent degradation of a high dielectric constant layer and a barrier layer by forming a capacitor dielectrics layer on a first electrode, by separating the first electrode from a second electrode and by preventing the second electrode and by preventing the capacitor dielectrics layer and the first electrode from chemical mutual operation with barrier material. SOLUTION: A stacked capacitor 100 is arranged in a trench 105 by arranging a conductive plug 106 in the trench 105 and by forming a barrier 110 in the conductive plug 106. Additionally a capacitor dielectrics layer 112 is so formed as to cover the trench 105, a hole is provided on the dielectric layer 112 and a first electrode 104 is formed in the hole. Further the first electrode 104 and a second electrode 128 are separated by extending the first electrode 104 and forming a high dielectric constant layer 102 on the first electrode 104. Then the capacitor dielectrics layer 112 and the first electrode 104 are prevented from chemical by affecting with material of the barrier 110.
申请公布号 JP2000183314(A) 申请公布日期 2000.06.30
申请号 JP19990347459 申请日期 1999.12.07
申请人 SIEMENS AG 发明人 LIN CHENTING;ANDREAS KNOLL
分类号 H01G4/33;H01L21/8242;H01L27/108;(IPC1-7):H01L27/108;H01L21/824 主分类号 H01G4/33
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