| 摘要 |
PROBLEM TO BE SOLVED: To contrive reduction of write voltage and miniaturization of an element while securing sufficient accumulating charge density, a data holding time and write/erase repeat resistance in a non-volatile storage element. SOLUTION: A tunnel oxidation film 5 is formed on an Si board 2 being a base, a floating gate electrode 6 having projected and recessed semispherical polysilicon on the surface is formed on the tunnel oxidation film 5, a high uniform interlayer insulation film 7 is formed on the floating gate electrode 6 having a projected and recessed shape, and the non-volatile storage element 1 is constituted by forming a control electrode 8 on the interlayer insulation film 7.
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