METHOD FOR FABRICATING SPIN-ON-GLASS INSULATION LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a spin-on-glass(SOG) insulation layer of a semiconductor device is provided to control generation of particles on a substrate in a high temperature annealing process when using a silazane-based SOG layer as an insulation layer by using poly silazane. CONSTITUTION: The SOG insulation layer is formed on a substrate having a plurality of stepped patterns by using a poly silazane solution whose solid component is not more than 20 weight percent(120). A pre-bake process is performed in a temperature scope from 50 to 350 deg.C to eliminate a solvent component of the SOG insulation layer(130). An annealing process is performed in a temperature scope from 600 to 1200 deg.C(150).