| 摘要 |
A Group III nitride compound semiconductor thin film which can be deposited on any given substrate to have uniform film quality and excellent crystalline, and a deposition method thereof. A semiconductor device and a manufacturing method thereof. A poly-crystalline Group III nitride compound thin film is deposited on a substrate by sputtering at a deposition rate of 15 to 200 nm/hour using a Group III nitride compound target in a plasma atmosphere of gas comprising 10 mole % or more nitrogen. Then, the poly-crystalline Group III nitride compound semiconductor thin film deposited on the substrate is irradiated with an excimer pulsed laser with an energy-density of about 200 mJ/cm2, in an atmosphere of gas with an oxygen content of 2 mole % or less. Thereby, lattice defects such as grain boundaries or dislocations which occur in the thin film are removed. |
