| 摘要 |
The semiconductor component has a source connecting region, a drain connecting region, and a gate connection region for connection of a semiconductor switching element. An edge termination region in this case provides an edge termination that is suitable for high voltages. The gate connecting region is at least partially located in the edge termination region which is suitable for high voltage. This results in an increase in the surface area for the active cell array, and hence in better value, without detracting from the electrical characteristics of the edge termination.
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