| 摘要 |
PROBLEM TO BE SOLVED: To provide a GaAsp-based light-emitting element capable of keeping excellent light emitting performance for a long time, and a method for manufacturing the same. SOLUTION: In a light-emitting element 1, a p-n junction section constituting a light-emitting section is formed by a p-type GaAs1-a Pa layer 9 and an n-type GaAs1-a Pa layer 8, and an N-doped region 8c is formed on the part including the p-n junction interface between the layers 8 and 9. A light-emitting element in which a nitrogen concentration Y in the region 8c is varied is fabricated with a mixed crystal ratio (a) of the layers 8 and 9 kept constant, the relation of light emission brightness/nitrogen concentration is determined by measuring the light emission brightness of each light-emitting element. The nitrogen concentration in the region 8c is adjusted so as to be 1.05 Yp-1.5 Yp when the nitrogen concentration at which the light emission brightness is maximum in the relation of the light emission brightness/nitrogen concentration is defined as the peak nitrogen concentration Yp in the ratio a. |
