发明名称 |
METHOD FOR FORMING FILM, FILM FORMING DEVICE AND SEMICONDUCTOR LIGHT-EMITTING DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a new film forming method and film forming device capable of readily forming a damage-free and high-functional epitaxial film. SOLUTION: A target is sputtered with helicon wave excited plasma, and an epitaxial growth is carried out on a substrate that plasma does not reach. |
申请公布号 |
JP2002329669(A) |
申请公布日期 |
2002.11.15 |
申请号 |
JP20010132087 |
申请日期 |
2001.04.27 |
申请人 |
JAPAN SCIENCE & TECHNOLOGY CORP |
发明人 |
CHICHIBU SHIGEHIDE |
分类号 |
C30B23/08;H01L21/203;H01L33/28;H01L33/32 |
主分类号 |
C30B23/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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