| 摘要 |
PROBLEM TO BE SOLVED: To reduce feed through dislocation of an elemental substrate composed of nitride semiconductor and obtain the elemental substrate as a thick film nitride semiconductor from a nitride semiconductor substrate wherein nitride semiconductor is grown on a retaining substrate. SOLUTION: A T-shaped first nitride semiconductor layer is grown on the retaining substrate. After that, a second nitride semiconductor layer is grown from an upper surface of the first nitride semiconductor layer and from side surfaces of both T-shaped wings, the retaining substrate is eliminated by wrapping, and nitride semiconductor of the elemental substrate is obtained. |
