发明名称 Memory macro with modular peripheral circuit elements
摘要 A memory macro includes a variable number of memory cell arrays and associated circuits, and peripheral circuit elements such as line drivers, power-source transistors, and power-source capacitors coupled to the associated circuits. Multiple peripheral circuit elements of one type are placed side by side in a certain direction, aligned in that direction with one or more memory cell arrays, and are coupled in parallel to the associated circuits of those memory cell arrays. The number of these peripheral circuit elements is selected according to the number of memory cell arrays aligned with them, so that electrical requirements can be met without unnecessary consumption of space or current.
申请公布号 US2005169032(A1) 申请公布日期 2005.08.04
申请号 US20050094236 申请日期 2005.03.31
申请人 HIGUCHI TSUTOMU 发明人 HIGUCHI TSUTOMU
分类号 G11C11/407;G11C5/02;G11C11/401;H01L21/822;H01L21/8242;H01L27/04;H01L27/10;H01L27/108;(IPC1-7):G11C5/02 主分类号 G11C11/407
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