| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and process capable of executing the process in the cycle time of a high speed by avoiding the undesirable condensation of gaseous precursors in atomic layer deposition which is a method for depositing an extremely thin film on a surface. SOLUTION: The atomic layer deposition apparatus is equipped with a process reactor chamber including an inlet for receiving the gaseous precursors and at least one outlet connected through outlet piping to an exhaust pump, a first gaseous precursor valve connected to the inlet to receive the first gaseous precursor, a second gaseous precursor valve connected to the inlet to receive the second gaseous precursor, a first bypass conduit connected to the first gaseous precursor valve, and a second bypass conduit connected to the second gaseous precursor valve, wherein the first bypass conduit and the second bypass conduit are separated from the outlet piping, and the method for adequately switching the gaseous precursors, are provided. COPYRIGHT: (C)2005,JPO&NCIPI
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